Topological Anderson insulator phenomena

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Topological Anderson insulator.

Disorder plays an important role in two dimensions, and is responsible for striking phenomena such as metal-insulator transition and the integral and fractional quantum Hall effects. In this Letter, we investigate the role of disorder in the context of the recently discovered topological insulator, which possesses a pair of helical edge states with opposing spins moving in opposite directions a...

متن کامل

Theory of the topological anderson insulator.

We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p2 sigma(z) to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted ba...

متن کامل

Topological Anderson insulator in three dimensions.

We show that disorder, when sufficiently strong, can transform an ordinary metal with strong spin-orbit coupling into a strong topological "Anderson" insulator, a new topological phase of quantum matter in three dimensions characterized by disordered insulating bulk and topologically protected conducting surface states.

متن کامل

The topological Anderson insulator phase in the Kane-Mele model

It has been proposed that adding disorder to a topologically trivial mercury telluride/cadmium telluride (HgTe/CdTe) quantum well can induce a transition to a topologically nontrivial state. The resulting state was termed topological Anderson insulator and was found in computer simulations of the Bernevig-Hughes-Zhang model. Here, we show that the topological Anderson insulator is a more univer...

متن کامل

Numerical study of the topological Anderson insulator in HgTe/CdTe quantum wells

We study the disorder effect on the transport properties in the HgTe/CdTe semiconductor quantum wells. We confirm that at a moderate disorder strength, the initially unquantized two-terminal conductance becomes quantized and the system makes a transition to the topological Anderson insulator TAI . Conductances calculated for the stripe and cylinder samples reveal the topological feature of TAI ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physical Review B

سال: 2011

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.84.035110